WELL-WIDTH DEPENDENCE OF INTERSUBBAND ABSORPTION IN INGAAS/INALAS MULTIQUANTUM WELLS

被引：16

作者：

ASAI, H

KAWAMURA, Y

机构：

[1] NTT Opto-electronics Laboratories, Atsugi, Kanagawa 243-01

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 12期

关键词：

D O I：

10.1063/1.102546

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The well-width dependence of intersubband absorption in InGaAs/InAlAs multiquantum wells grown by molecular beam epitaxy is investigated. The energies of the absorption peaks decrease from 300 to 100 meV with an increasing well width from 35 to 200 Å. This well-width dependence of the peak energy is in good agreement with theoretical calculations. For a wide quantum well, two sharp absorption peaks were observed, including the transitions from the second to the third subbands.

引用

页码：1149 / 1151

页数：3

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