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- [21] SCATTERING OF HOT-ELECTRONS IN N-TYPE INSB AT LOW-TEMPERATURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10): : 1626 - 1630
- [22] CAPTURE OF HOT-ELECTRONS IN STRUCTURES FORMED BY DEPOSITION OF N-TYPE GAAS EPITAXIAL-FILMS ON SEMIINSULATING SUBSTRATES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (10): : 1116 - 1118
- [24] DETERMINATION OF THE TEMPERATURE OF HOT-ELECTRONS IN N-TYPE INAS BY INTERFERENCE MODULATION OF RADIATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (08): : 967 - 968
- [25] OPTICAL PHONON DISTURBANCES BY HOT-ELECTRONS IN N-TYPE INDIUM-ANTIMONIDE ACTA PHYSICA AUSTRIACA, 1973, 37 (03): : 259 - 269
- [26] INERTIAL PROPERTIES OF HOT ELECTRONS IN n-TYPE GaAs. Soviet physics. Semiconductors, 1981, 15 (08): : 906 - 908
- [27] EFFECTS OF HOT-ELECTRONS ON THE RESPONSE OF N-TYPE EXTRINSIC SILICON IR DETECTORS BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 313 - 313
- [29] TEMPERATURE DEPENDENCE OF ANISOTROPIC DRIFT VELOCITY OF HOT-ELECTRONS IN N-TYPE GE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (06): : 891 - &