SIMPLE PHYSICAL MODEL FOR INJECTION EFFICIENCY OF DIFFUSED P-N JUNCTIONS

被引：0

作者：

WHITTIER.RJ

DOWNING, JP

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1969年 / ED16卷 / 02期

关键词：

D O I：

10.1109/T-ED.1969.16667

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：245 / &

共 50 条

[31] DISLOCATIONS AND THEIR RELATION TO IRREGULARITIES IN ZINC-DIFFUSED GAASP P-N JUNCTIONS
GRENNING, DA
HERZOG, AH
JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) : 2783 - +
[32] INVESTIGATION OF REACTIVE PROPERTIES OF DIFFUSED SI P-N JUNCTIONS IN REGION OF HIGH INJECTION LEVELS AND STRONG ELECTRIC FIELDS
ABDULLAY.GB
JAFAROVA, EA
ISKENDER.ZA
CHELNOKO.VE
ALIKHANO.S
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SOLID-STATE ELECTRONICS, 1968, 11 (02) : 233 - &
[33] INVESTIGATION OF INJECTION ELECTROLUMINESCENCE OF P-N JUNCTIONS IN GALLIUM PHOSPHIDE
UTKIN, YA
ZABELINA, LG
BUKHAROV.TA
PATRAKOV.AY
BORSHCHE.AS
ZYKOV, AM
PESKOV, OG
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (04): : 450 - +
[34] Spreading resistance measurements in p-n junctions - A simple technique
Fabris, L
Goulding, FS
Madden, NW
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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1997, 386 (2-3): : 470 - 473
[35] Spreading resistance measurements in p-n junctions - a simple technique
Fabris, L.
Goulding, F.S.
Madden, N.W.
Manfredi, P.F.
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1997, 386 (2-3): : 470 - 473
[36] INFLUENCE OF ORIENTATION OF GAAS CRYSTALS ON DEPTH AND PHOTOELECTRIC PROPERTIES OF DIFFUSED P-N JUNCTIONS
GUTKIN, AA
KAGAN, MB
SEDOV, VE
CHERNOV, YI
SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (08): : 2046 - &
[37] CAPACITANCE-VOLTAGE DEPENDENCE OF ZINC-DIFFUSED GAAS P-N JUNCTIONS
AUKERMAN, LW
KYSER, DF
MILLEA, MF
SOLID-STATE ELECTRONICS, 1965, 8 (02) : 119 - &
[38] SHORT-WAVELENGTH LUMINESCENCE OF GASB DIFFUSED P-N JUNCTIONS AT LOW TEMPERATURES
STUCHEBNIKOV, VM
DNEPROVS.TS
YUNOVICH, AE
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (08): : 1053 - +
[39] INVESTIGATION OF ELECTRICAL CHARACTERISTICS OF GAAS DIFFUSED P-N JUNCTIONS USED AS SOLAR CELLS
KAGAN, MB
LANDSMAN, AP
KHOLEV, BA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (06): : 761 - +
[40] AVALANCHE BREAKDOWN VOLTAGE IN SILICON DIFFUSED P-N JUNCTIONS AS A FUNCTION OF IMPURITY GRADIENT
VELORIC, HS
PRINCE, MB
EDER, MJ
JOURNAL OF APPLIED PHYSICS, 1956, 27 (08) : 895 - 899

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