SI P+-N SHALLOW JUNCTION FABRICATION USING ON-AXIS GA+ IMPLANTATION

被引：10
|
作者：
LIN, CM
STECKL, AJ
CHOW, TP
机构：
[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12180
[2] GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 24期
关键词：
D O I：
10.1063/1.99577
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2049 / 2051
页数：3
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