HIGH-SPEED BICMOS TECHNOLOGY WITH A BURIED TWIN WELL STRUCTURE

被引：13
|
作者：
IKEDA, T [1 ]
WATANABE, A [1 ]
NISHIO, Y [1 ]
MASUDA, I [1 ]
TAMBA, N [1 ]
ODAKA, M [1 ]
OGIUE, K [1 ]
机构：
[1] HITACHI LTD,CTR DEVICE DEV,OUME,TOKYO 198,JAPAN
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 06期
关键词：
D O I：
10.1109/T-ED.1987.23085
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1304 / 1310
页数：7
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