PERFORMANCE OF SIC POWER MOSFETS - ON RESISTANCE VERSUS VOLTAGE CAPABILITY AND SWITCHING SPEED

被引：0
|
作者：
BEYDOUN, B
ROSSEL, P
TRANDUC, H
CHARITAT, G
机构：
来源：
JOURNAL DE PHYSIQUE III | 1994年 / 4卷 / 08期
关键词：
D O I：
10.1051/jp3:1994207
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The DC trade-off ''ON resistance versus voltage capability'' is determined for the SiC multicellular Power MOSFET transistor. First, this limit is analytically calculated for the bulk material. Then, the influence of the size of the MOSFET cell is considered. Under dynamic condition, the switching behaviour is simulated and analysed. We confirm that the DC performances of the SiC device are better than those of Si structures. From a dynamic point of view, a degradation can or not occur depending upon the voltage capability of the considered device. The degradation is due to the drain-gate Miller capacitance increase with the drain doping value.
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收藏
页码：1383 / 1396
页数：14
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