ADSORPTION OF STEAM ON GAAS, ZNSE AND THEIR SOLID-SOLUTIONS

被引:0
|
作者
KIROVSKAYA, IA [1 ]
MULIKOVA, GM [1 ]
YUREVA, AV [1 ]
机构
[1] TOMSK STATE UNIV, TOMSK, USSR
来源
ZHURNAL FIZICHESKOI KHIMII | 1974年 / 48卷 / 05期
关键词
D O I
暂无
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:1227 / 1229
页数:3
相关论文
共 50 条
  • [41] Growth and photosensitivity of the (GaAs)1-x(ZnSe)x solid solutions
    Physicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan
    Appl Sol Energy, 2006, 1 (52-55):
  • [42] THE FORMATION OF SOLID-SOLUTIONS IN SURFACE-LAYERS - AN IMPORTANT ADSORPTION MECHANISM
    JENSEN, BS
    JOURNAL OF CONTAMINANT HYDROLOGY, 1993, 13 (1-4) : 231 - 247
  • [43] FELDSPAR SOLID-SOLUTIONS
    KROLL, H
    SCHMIEMANN, I
    VONCOLLN, G
    AMERICAN MINERALOGIST, 1986, 71 (1-2) : 1 - 16
  • [44] OBTAINMENT OF TITANIUM AND VANADIUM DIOXIDE SOLID-SOLUTIONS BY OXIDATION OF THEIR SESQUIOXIDE SOLID-SOLUTIONS
    MAILLOT, F
    PARIS, RA
    COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES SERIE C, 1973, 277 (24): : 1361 - 1364
  • [45] DEEP LEVELS IN GAAS1-XPX SOLID-SOLUTIONS WITH SHALLOW DONORS
    YUROVA, ES
    RASHEVSKAYA, EP
    OVSYANNIKOVA, NV
    KEVORKOV, MN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (11): : 1829 - 1830
  • [46] ACTIVITY MEASUREMENTS OF GA IN GAAS-INAS SOLID-SOLUTIONS BY THE EMF METHOD
    KATAYAMA, I
    NAKAI, T
    INOMOTO, T
    KOZUKA, Z
    MATERIALS TRANSACTIONS JIM, 1989, 30 (05): : 354 - 359
  • [47] CHARACTERISTIC FEATURES OF RADIATION DEFECTS IN GAAS1-XPX SOLID-SOLUTIONS
    BRAILOVSKII, EY
    MARCHUK, ND
    PAMBUKHCHYAN, NK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (08): : 949 - 950
  • [48] PREPARATION AND INVESTIGATION OF METASTABLE CONTINUOUS SOLID-SOLUTIONS IN THE GE-GAAS SYSTEM
    ALFEROV, ZI
    ZHINGAREV, MZ
    KONNIKOV, SG
    MOKAN, II
    ULIN, VP
    UMANSKII, VE
    YAVICH, BS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (05): : 532 - 537
  • [49] SYNTHESIS OF SOLID-SOLUTIONS BY IMPLANTATION OF AL-+ AND P-+ IONS INTO GAAS
    KUZNETSOV, ON
    LEZHEIKO, LV
    LYUBOPYTOVA, EV
    SAFRONOV, LN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (08): : 851 - 853
  • [50] BAND-GAP OF GAP-INP-GAAS-INAS SOLID-SOLUTIONS
    PANYUTIN, VL
    PONEDELNIKOV, BE
    ROZENSON, AE
    CHIZHIKOV, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (05): : 594 - 595