VISIBLE LUMINESCENCE FROM POROUS SILICON

被引：0
|
作者：
BALA, W
FIRSZT, F
NOSSARZEWSKAORLOWSKA, E
BRZOZOWSKI, A
ORLOWSKI, BA
KOWALSKI, BJ
GUZIEWICZ, E
机构：
[1] INST ELECTR MAT TECHNOL,PL-01919 WARSAW,POLAND
[2] POLISH ACAD SCI,INST ORAL PATHOL,PL-02668 WARSAW,POLAND
来源：
ACTA PHYSICA POLONICA A | 1993年 / 84卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
This paper presents results of investigation of the temperature dependence of visible luminescence in porous silicon layers prepared by anodization in hydrofluoric acid. Luminescence spectra were measured in the temperature range between 40 K and 350 K. Room temperature reflectivity spectra were also measured in vacuum ultraviolet radiation range from 4 eV to 12 eV.
引用
收藏
页码：761 / 764
页数：4
相关论文
共 50 条
  • [21] Efficient luminescence from porous silicon
    Daami, A
    Bremond, G
    Stalmans, L
    Poortmans, J
    JOURNAL OF LUMINESCENCE, 1998, 80 (1-4) : 169 - 172
  • [22] Porous silicon: From luminescence to LEDs
    Collins, RT
    Fauchet, PM
    Tischler, MA
    PHYSICS TODAY, 1997, 50 (01) : 24 - 31
  • [23] Mechanism of luminescence from porous silicon
    Yan, D. T.
    Galkin, N. G.
    ASIA-PACIFIC CONFERENCE ON FUNDAMENTAL PROBLEMS OF OPTO- AND MICROELECTRONICS, 2017, 10176
  • [24] TIME-RESOLVED LUMINESCENCE SPECTRA AND THE ORIGIN OF VISIBLE LUMINESCENCE KINETICS IN POROUS SILICON
    KOMPAN, ME
    LAIKHO, R
    FIZIKA TVERDOGO TELA, 1993, 35 (02): : 365 - 369
  • [25] Visible photoluminescence from porous silicon
    Murayama, Kazuro, 1600, (31):
  • [26] VISIBLE PHOTOLUMINESCENCE FROM POROUS SILICON
    MURAYAMA, K
    MIYAZAKI, S
    HIROSE, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (9B): : L1358 - L1361
  • [27] VISIBLE ELECTROLUMINESCENCE FROM POROUS SILICON
    KOSHIDA, N
    KOYAMA, H
    APPLIED PHYSICS LETTERS, 1992, 60 (03) : 347 - 349
  • [28] VISIBLE LUMINESCENCE FROM BRANCHED SILICON POLYMERS
    KISHIDA, H
    TACHIBANA, H
    MATSUMOTO, M
    TOKURA, Y
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (05) : 3362 - 3366
  • [29] SURFACE PASSIVATION - A CRITICAL PARAMETER FOR THE VISIBLE LUMINESCENCE OF ELECTROOXIDIZED POROUS SILICON
    MIHALCESCU, I
    LIGEON, M
    MULLER, F
    ROMESTAIN, R
    VIAL, JC
    JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) : 111 - 115
  • [30] Improvement in visible luminescence properties of anodized porous silicon by indium plating
    Ito, Toshimichi, 1600, JJAP, Minato-ku, Japan (34):
12345