1/F NOISE IN ALGAAS/GAAS HBTS USING ULTRASENSITIVE CHARACTERIZATION TECHNIQUES FOR IDENTIFYING NOISE MECHANISMS

被引：0
|
作者：
TUTT, MN [1 ]
PAVLIDIS, D [1 ]
PEHLKE, D [1 ]
PLANA, R [1 ]
GRAFFEUIL, J [1 ]
机构：
[1] UNIV PAUL SABATIER, AUTOMAT & ANAL SYST LAB, F-31077 TOULOUSE, FRANCE
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1992年 / 120期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The 1/f noise characteristics and mechanisms of GaAs/AlGaAs HBT's are studied using conventional short circuit current measurements (S(IC)(f) and S(IB)(f)) and an indirect highly sensitive technique based on noise figure characterization. The S(IC)(f) and S(IB)(f) follows a 1/f dependence at low frequencies, for moderate bias conditions. A Lorentz component is found in the spectra. The base resistances are obtained by approximating them to the correlation resistances and range from 17-OMEGA to 63-OMEGA. The intrinsic noise sources are studied using a simple model employing two internal, uncorrelated noise sources. These sources are similar to the S(IC)(f) and S(IB)(f) at moderate bias conditions. However, the intrinsic collector noise differs from S(IC)(f) at low bias conditions.
引用
收藏
页码：317 / 322
页数：6
相关论文
共 50 条
  • [11] 1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with a noise corner frequency below 1 kHz
    Shin, JH
    Lee, JW
    Suh, YS
    Kim, BM
    IEEE ELECTRON DEVICE LETTERS, 1996, 17 (02) : 65 - 68
  • [12] Current gain modulation and 1/f noise control of GaAs based HBTs using on-ledge Schottky diodes
    Ma, PX
    Chang, MF
    Yang, YF
    Zampardi, P
    Huang, RT
    Sheu, J
    Li, GP
    GAAS IC SYMPOSIUM - 22ND ANNUAL, TECHNICAL DIGEST 2000, 2000, : 245 - 248
  • [13] 1/f noise enhancement in GaAs
    Izpura, JI
    Malo, J
    NOISE AND FLUCTUATIONS, 2005, 780 : 113 - 116
  • [14] 1/F NOISE IN GAAS FILAMENTS
    TACANO, M
    SUGIYAMA, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (11) : 2548 - 2553
  • [15] Low 1/f noise SiGe HBTs with application to low phase noise microwave oscillators
    Gruhle, A
    Mahner, C
    ELECTRONICS LETTERS, 1997, 33 (24) : 2050 - 2052
  • [16] 1/F NOISE-REDUCTION IN SELF-ALIGNED ALGAAS/GAAS HBT WITH ALGAAS SURFACE PASSIVATION LAYER
    HAYAMA, N
    HONJO, K
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (09) : 2180 - 2182
  • [17] Low 1/f noise SiGe HBTs with application to low phase noise microwave oscillators
    Daimler-Benz Research, Ulm, Germany
    Electron Lett, 24 (2050-2052):
  • [18] 1/F NOISE IN DOUBLE-HETEROJUNCTION ALGAAS/GAAS LASER-DIODES ON GAAS AND ON SI-SUBSTRATES
    FANG, RZ
    VANRHEENEN, AD
    VANDERZIEL, A
    YOUNG, AC
    VANDERZIEL, JP
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) : 4087 - 4090
  • [19] The 1/f noise in GaAs MESFET transistors
    Konczakowska, A
    Cichosz, J
    Hasse, L
    Smulko, J
    Jelenski, A
    Dobrzanski, L
    NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE, 1997, : 59 - 62
  • [20] 1/F NOISE IN GAAS SCHOTTKY DIODES
    SIKULA, J
    VASINA, P
    MUSILOVA, V
    CHOBOLA, Z
    ROTHBAUER, M
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1984, 84 (02): : 693 - 696
12345