DEFECT STUDY OF INAS/GAAS AND GAP/GAAS DOUBLE-HETEROSTRUCTURE

被引：0

作者：

ARAGON, G ^{[1
]}

MOLINA, SI ^{[1
]}

GONZALEZ, Y ^{[1
]}

GONZALEZ, L ^{[1
]}

BRIONES, F ^{[1
]}

GARCIA, R ^{[1
]}

机构：

[1] CSIC,CTR NACL MICROELECTR,E-28006 MADRID,SPAIN

来源：

MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 | 1993年 / 134期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A defect characterization of two highly lattice-mismatched semiconductor heterostructures (InAs/GaAs and GaP/GaAs) grown by Atomic Layer Molecular Beam Epitaxy has been performed by Transmission Electron Microscopy. The experimental results show that layers grown under compression exhibit a lower planar defect density than those grown under tension. This behaviour can be explained by the dissociation state of dislocations which depends on the sign of the stress in each layer.

引用

页码：369 / 372

页数：4

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