MEASURING THE JUNCTION TEMPERATURE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING ELECTROLUMINESCENCE

被引：9
|
作者：
FUKAI, YK
MATSUOKA, Y
FURUTA, T
机构：
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01
来源：
APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 03期
关键词：
D O I：
10.1063/1.110036
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Rises in the junction temperatures of heterojunction bipolar transistors (HBTs) due to self-heating effects during transistor operation are measured using the electroluminescence of the band-to-band recombination. This method is useful for the direct junction temperature monitoring of small geometry devices. Junction temperatures measured in AlGaAs/GaAs HBTs with five 2 X 20 mum2 emitter fingers are raised 115-degrees-C when the product of the collector current and the emitter-collector voltage is 0.25 W. The thermal resistance is determined to be 260-degrees-C/W at 300 K.
引用
收藏
页码：340 / 342
页数：3
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