共 50 条
- [2] Ytterbium oxide formation at the graphene-SiC interface studied by photoemission JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2013, 31 (02):
- [8] THE SI(111)/MO INTERFACE AS STUDIED WITH SYNCHROTRON RADIATION PHOTOEMISSION AND AUGER-ELECTRON SPECTROSCOPIES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 617 - 618
- [10] Si/Ge ordered interface: Structure and formation mechanism ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 511 - 515