HIGH DIELECTRIC-CONSTANT OF RF-SPUTTERED HFO2 THIN-FILMS

被引：49
|
作者：
HSU, CT
SU, YK
YOKOYAMA, M
机构：
[1] Deparment of Electrical Engineering, National Cheng Kung University, Tainan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1992年 / 31卷 / 08期
关键词：
SPUTTERING; ELECTROLUMINESCENT; DIELECTRIC CONSTANT; STORAGE CHARGE DENSITY; SIGNAL EXCITATION;
D O I：
10.1143/JJAP.31.2501
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Hafnium dioxide (HfO2) thin films are deposited on indium-tin-oxide (ITO)-coated glass substrates by the radio-frequency (RF) sputtering method using a HfO2 sintered target. The deposition conditions, dielectric loss and dielectric constant of HfO2 films before and after heat treatment are studied. The best deposition conditions for HfO2 films are RF power 200 W, substrate temperature 100-degrees-C and sputtering gas pure Ar. The maximum dielectric constants are about 150 and 45 with 1 kHz signal excitation before and after annealing, respectively. They are higher than any ever reported.
引用
收藏
页码：2501 / 2504
页数：4
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