CHARACTERIZATION OF A RAPID THERMAL ANNEAL TINXOY/TISI2 CONTACT BARRIER

被引：6
|
作者：
HO, VQ
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1989年 / 18卷 / 04期
关键词：
D O I：
10.1007/BF02657778
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：493 / 499
页数：7
相关论文
共 50 条
  • [21] Characterization of thin TiSi2 films by spectroscopic ellipsometry and thermal wave analysis
    Kasko, I
    Kal, S
    Ryssel, H
    MICROELECTRONIC ENGINEERING, 1997, 37-8 (1-4) : 455 - 460
  • [22] Schottky barrier formation at Al/TiB2/TiSi2/Si and Cu/TiB2/TiSi2/Si interfaces
    Pelleg, J
    MICROELECTRONIC ENGINEERING, 2004, 75 (04) : 413 - 422
  • [23] Surface scattering impact on Si/TiSi2 contact resistance
    Vuttivorakulchai, Kantawong
    Pourghaderi, Mohammad Ali
    Kim, Gwang-Jun
    Song, Seunghyun
    Kim, Yoon-Suk
    Kwon, Uihui
    Kim, Dae Sin
    SOLID-STATE ELECTRONICS, 2023, 201
  • [24] SELF-ALIGNED DIFFUSION BARRIER BY NITRIDATION OF TISI2
    WITTMER, M
    APPLIED PHYSICS LETTERS, 1988, 52 (19) : 1573 - 1575
  • [25] CHARACTERIZATION OF TIN/TISI2 BILAYER FOR APPLICATION TO ULSI
    LEE, CJ
    SUNG, YK
    JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (07) : 717 - 723
  • [26] Epitaxial growth of TiSi2 (C49) on (001)Si by rapid thermal annealing
    Wang, LM
    Wu, ST
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (10): : 6475 - 6480
  • [27] CHARACTERIZATION OF THE SELF-ALIGNED TISI2 PROCESS
    LAU, CK
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C98 - C98
  • [28] Spike anneal:: RTP processing at reduced thermal budget with applications to TiSi2 formation towards 0.1-μm linewidths
    Gerritsen, E
    MICROELECTRONIC ENGINEERING, 2000, 50 (1-4) : 147 - 151
  • [29] C49 TiSi2 on silicon: Preparation by rapid thermal processing and optical properties
    Zhuravleva, V. I.
    Pershukevich, P. P.
    Markevich, M. I.
    Stel'makh, V. F.
    Chaplanov, A. M.
    INORGANIC MATERIALS, 2014, 50 (04) : 365 - 368
  • [30] Epitaxial growth of TiSi2 (C49) on (001)Si by rapid thermal annealing
    Wang, Li-Ming
    Wu, Shinn-Tyan
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (10): : 6475 - 6480
12345