CHARACTERIZATION OF A RAPID THERMAL ANNEAL TINXOY/TISI2 CONTACT BARRIER

被引:6
|
作者
HO, VQ
机构
关键词
D O I
10.1007/BF02657778
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:493 / 499
页数:7
相关论文
共 50 条
  • [1] SELF-ALIGNED TINXOY/TISI2 CONTACT FORMATION
    KU, YH
    LEE, SK
    KWONG, DL
    THIN SOLID FILMS, 1989, 172 (01) : 1 - 14
  • [2] OXYGEN CONTAMINATION CONTROL FOR A TISI2 ATMOSPHERIC THERMAL ANNEAL PROCESS
    WANG, M
    ANTHONY, J
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C314 - C314
  • [3] STABLE, SELF-ALIGNED TINXOY/TISI2 CONTACT FORMATION FOR SUBMICRON DEVICE APPLICATIONS
    KU, YH
    LOUIS, E
    SHIH, DK
    LEE, SK
    KWONG, DL
    ALVI, NS
    APPLIED PHYSICS LETTERS, 1987, 50 (22) : 1598 - 1600
  • [4] Epitaxial TiSi2 on silicon by rapid thermal annealing
    Wan, WK
    Wu, ST
    MATERIALS LETTERS, 1997, 30 (01) : 105 - 108
  • [5] SELF-ALIGNED TIN BARRIER FORMATION BY RAPID THERMAL NITRIDATION OF TISI2 IN AMMONIA
    KAMGAR, A
    BAIOCCHI, FA
    EMERSON, AB
    SHENG, TT
    VASILE, MJ
    HAYNES, RW
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (06) : 2395 - 2401
  • [6] CHARACTERIZATION OF TISI2 OHMIC AND SCHOTTKY CONTACTS FORMED BY RAPID THERMAL ANNEALING TECHNOLOGY
    MALLARDEAU, C
    MORAND, Y
    ABONNEAU, E
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (01) : 238 - 241
  • [7] Selective rapid thermal chemical vapor deposition of TISI2
    Öztürk, MC
    Gladden, DB
    Ren, X
    Weintraub, CE
    TRANSIENT THERMAL PROCESSING TECHNIQUES IN ELECTRONIC MATERIALS, 1996, : 55 - 59
  • [8] Nitridation of TiSi2 thin films by rapid thermal processing
    Perez-Rigueiro, J.
    Jimenez, C.
    Vazquez, L.
    Perez-Casero, R.
    Martinez-Duart, J.M.
    Surface and Coatings Technology, 1996, 80 (1-2): : 72 - 75
  • [9] Contact TiSi2 and Barrier TiN Layers for ULSI Multilevel Metallization
    Vasiliev A.G.
    Orlikovsky A.A.
    Rodatis V.V.
    Horin I.A.
    Russian Microelectronics, 2001, 31 (1) : 7 - 12
  • [10] Nitridation of TiSi2 thin films by rapid thermal processing
    PerezRigueiro, J
    Jimenez, C
    Vazquez, L
    PerezCasero, R
    MartinezDuart, JM
    SURFACE & COATINGS TECHNOLOGY, 1996, 80 (1-2): : 72 - 75