LOW FREQUENCY OSCILLATIONS IN SEMI-INSULATING GALLIUM ARSENIDE

被引：47

|

作者：

SACKS, HK

MILNES, AG

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1970年 / 28卷 / 06期

关键词：

D O I：

10.1080/00207217008900175

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：565 / +

页数：1

相关论文

共 50 条

[21] OPTICALLY ENHANCED PHOTOCONDUCTIVITY IN SEMI-INSULATING GALLIUM-ARSENIDE
DESNICA, UV
SANTIC, B
APPLIED PHYSICS LETTERS, 1989, 54 (09) : 810 - 812
[22] Micro-distribution of carbon in semi-insulating gallium arsenide
Xu, YS
Yang, XR
Wang, HY
Lei, T
Liu, CC
Xin, W
Qin, DZ
ACTA PHYSICA SINICA, 2005, 54 (04) : 1904 - 1908
[23] PHOTOCONDUCTIVITY OF CHROMIUM-DOPED SEMI-INSULATING GALLIUM ARSENIDE
OMELYANOVSKII, EM
PERVOVA, LY
RASHEVSK.EP
FISTUL, VI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (03): : 484 - +
[24] OPTICAL ABSORPTION IN AN ELECTRIC FIELD IN SEMI-INSULATING GALLIUM ARSENIDE
LAMBERT, LM
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (09) : 1409 - &
[25] PRECIPITATES IN SEMI-INSULATING GALLIUM ARSENIDE CRYSTALS DOPED WITH IRON
GIMELFAR.FA
MILVIDSK.MG
OMELYANO.EM
PELEVIN, OV
FISTUL, VI
SOVIET PHYSICS SOLID STATE,USSR, 1969, 11 (05): : 1124 - +
[26] STATIC DEFORMATION AT PIEZORESONANCE IN SEMI-INSULATING GALLIUM-ARSENIDE
VOROBEV, YV
ZAKHARCH.VN
FIZIKA TVERDOGO TELA, 1974, 16 (11): : 3483 - 3485
[27] PREPARATION OF EPITAXIAL SEMI-INSULATING GALLIUM ARSENIDE BY IRON DOPING
HOYT, PL
HAISTY, RW
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (07) : C147 - &
[28] New aspects of copper diffusion in semi-insulating gallium arsenide
Griehl, S
Herms, M
Klober, J
Niklas, JR
Siegel, W
APPLIED PHYSICS LETTERS, 1996, 69 (12) : 1767 - 1769
[29] PHOTOCONDUCTIVITY OF SEMI-INSULATING GALLIUM ARSENIDE IN PRESENCE OF A MAGNETIC FIELD
MILNERBROWN, H
FORTIN, E
CANADIAN JOURNAL OF PHYSICS, 1969, 47 (24) : 2789 - +
[30] PREPARATION OF EPITAXIAL SEMI-INSULATING GALLIUM ARSENIDE BY IRON DOPING
HOYT, PL
HAISTY, RW
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) : 296 - &

← 1 2 3 4 5 →