THE GROWTH OF (AL,GA)SB TILTED SUPERLATTICES AND THEIR HETEROEPITAXY WITH INAS TO FORM CORRUGATED-BARRIER QUANTUM-WELLS

被引：15

作者：

CHALMERS, SA ^{[1
]}

KROEMER, H ^{[1
]}

GOSSARD, AC ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0022-0248(91)91057-H

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have demonstrated the molecular beam epitaxial growth of (Al,Ga)Sb titled superlattices (TSLs) on 2-degrees vicinal (100) GaSb and GaAs substrates. The existence of (Al,Ga)Sb TSLs proves that step-flow growth can occur in this material system, and in the presence of strain. Lateral fluctuations in the tilt angle of the superlattice are observed and are found to be caused by a non-uniform distribution of incorporated adatoms which is correlated with the surface step density. The (Al,Ga)Sb TSL growth was also combined with InAs growth to form an InAs quantum well with "corrugated" barriers consisting of (Al,Ga)Sb TSLs. The electron mobilities in this structure exceeded 6 x 10(5) cm2/V.s.

引用

页码：647 / 650

页数：4