CREEP OF THIN METALLIC-FILMS

被引：14
|
作者：
BROTZEN, FR [1 ]
ROSENMAYER, CT [1 ]
COFER, CG [1 ]
GALE, RJ [1 ]
机构：
[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75265
来源：
VACUUM | 1990年 / 41卷 / 4-6期
关键词：
D O I：
10.1016/0042-207X(90)93935-C
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Free-standing films of Al, AlSi (1%) and Cu, 1 μm thick, were prepared by chemical ablation from commercially produced metallizations deposited on Si/SiO2 substrates. The films were tested at various temperatures and stresses in a specially designed creep apparatus. By varying temperatures and loads, the activation energies and stress dependences for secondary creep were determined. In addition, primary creep curves were generated by adding small load increments during the tests. By evaluating these curves, the activation volumes and dislocation densities were obtained. © 1990.
引用
收藏
页码：1287 / 1290
页数：4
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