共 50 条
- [41] INTERFACIAL MICROSTRUCTURES IN INXGA1-XAS/GAAS STRAINED LAYER STRUCTURES CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES, 1989, 148 : 303 - 308
- [42] Electronic band structures of coherently strained layer GaAs on InxGa1-xAs(001) substrates Guti Dianzixue Yanjiu Yu Jinzhan/Research & Progress of Solid State Electronics, 1996, 16 (04):
- [43] EXCITONIC TRANSITIONS IN STRAINED-LAYER INXGA1-XAS/INP QUANTUM WELLS PHYSICAL REVIEW B, 1989, 39 (08): : 5531 - 5534
- [44] GROWTH, CHARACTERIZATION AND OPTICAL STUDIES OF INXGA1-XAS/INYAL1-YAS STRAINED-LAYER SUPERLATTICES ON INP JOURNAL DE PHYSIQUE, 1987, 48 (C-5): : 169 - 173
- [45] HYDROSTATIC-PRESSURE COEFFICIENTS OF THE PHOTOLUMINESCENCE OF INXGA1-XAS/GAAS STRAINED-LAYER QUANTUM-WELLS PHYSICAL REVIEW B, 1990, 42 (05): : 3113 - 3119
- [50] PRODUCTION OF INXCA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES BY MBE DOKLADY AKADEMII NAUK SSSR, 1988, 303 (02): : 364 - 367