EFFECTS OF THERMAL ANNEALING ON THE CONFINED ELECTRONIC STATES OF INXGA1-XAS GAAS STRAINED-LAYER SUPERLATTICES

被引：2
|
作者：
IIKAWA, F
MOTISUKE, P
CERDEIRA, F
SACILOTTI, MA
MASUT, RA
ROTH, AP
机构：
[1] UNIV MONTREAL,ECOLE POLYTECH,MONTREAL H3C 3A7,QUEBEC,CANADA
[2] TELEBRAS,CPQD,OPTOELECTR DEVICE LAB,CAMPINAS,SP,BRAZIL
[3] NATL RES COUNCIL CANADA,SEMICOND GRP,OTTAWA K1A 0R6,ONTARIO,CANADA
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1989年 / 5卷 / 02期
关键词：
D O I：
10.1016/0749-6036(89)90299-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：273 / 278
页数：6
相关论文
共 50 条
  • [1] ELECTROABSORPTION EFFECTS IN INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES
    NIKI, S
    KELLNER, AL
    LIN, SC
    CHENG, A
    WILLIAMS, AR
    CHANG, WSC
    WIEDER, HH
    APPLIED PHYSICS LETTERS, 1990, 56 (05) : 475 - 477
  • [2] STRUCTURE OF INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES
    CUI, SF
    WANG, GM
    MAI, ZH
    FENG, W
    ZHOU, JM
    PHYSICAL REVIEW B, 1993, 48 (12): : 8797 - 8800
  • [3] PHOTOREFLECTANCE OF INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES
    TANG, YS
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (10) : 871 - 875
  • [4] OPTICAL STUDIES IN INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES
    IIKAWA, F
    CERDEIRA, F
    VAZQUEZLOPEZ, C
    MOTISUKE, P
    SACILOTTI, MA
    ROTH, AP
    MASUT, RA
    PHYSICAL REVIEW B, 1988, 38 (12): : 8473 - 8476
  • [5] ELECTRO-OPTICAL EFFECTS IN INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES
    FORTIN, E
    HUA, BY
    ROTH, AP
    PHYSICAL REVIEW B, 1989, 39 (15): : 10887 - 10891
  • [6] DISLOCATION-STRUCTURE IN INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES
    RAJAN, K
    DEVINE, R
    MOORE, WT
    MAIGNE, P
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) : 1713 - 1716
  • [7] DIFFUSION DYNAMICS OF HOLES IN INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES
    GOURLEY, PL
    WICZER, JJ
    ZIPPERIAN, TE
    DAWSON, LR
    APPLIED PHYSICS LETTERS, 1986, 49 (02) : 100 - 102
  • [8] RAMAN-SCATTERING FROM INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES
    WU, CY
    LAO, PD
    SHEN, SC
    APPLIED PHYSICS LETTERS, 1991, 58 (14) : 1491 - 1493
  • [9] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES
    FRITZ, IJ
    PICRAUX, ST
    DAWSON, LR
    DRUMMOND, TJ
    LAIDIG, WD
    ANDERSON, NG
    APPLIED PHYSICS LETTERS, 1985, 46 (10) : 967 - 969
  • [10] STRAIN DETERMINATION IN INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES BY PHOTOMODULATED REFLECTANCE
    INOKI, CK
    LEMOS, V
    CERDEIRA, F
    VASQUEZLOPEZ, C
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (07) : 3266 - 3270
12345