ANISOTROPIC CARRIER MOBILITY DUE TO DISLOCATIONS IN III-V COMPOUNDS

被引：5

作者：

BOOYENS, H

VERMAAK, JS

PROTO, GR

机构：

来源：

关键词：

D O I：

10.1063/1.325058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1173 / 1176

页数：4

共 50 条

[31] CHALLENGES IN III-V SEMICONDUCTOR COMPOUNDS
GATOS, HC
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C94 - C94
[32] Thermodynamic properties of III-V compounds
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[33] STUDY OF AMORPHOUS III-V COMPOUNDS
THEYE, ML
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[34] ANTISITE DEFECTS IN III-V COMPOUNDS
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TIGINYANU, IM
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[35] ASYMMETRIC CRACKING IN III-V COMPOUNDS
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[36] ADDUCTS IN MOVPE OF III-V COMPOUNDS
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[37] DEFECTS IN AMORPHOUS III-V COMPOUNDS
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[38] III-V COMPOUNDS AND ALLOYS - AN UPDATE
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SCIENCE, 1980, 208 (4446) : 908 - 915
[39] Integrated optics in III-V compounds
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SILICON-BASED MICROPHOTONICS: FROM BASICS TO APPLICATIONS, 1999, 141 : 347 - 367
[40] Heterojunction FETs in III-V compounds
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