TEM STUDY OF ION-IMPLANTED GAAS AFTER PULSED ELECTRON-BEAM ANNEALING

被引：0
|
作者：
GAIGHER, HL
ALBERTS, HW
机构：
[1] Department of Physics, University of Pretoria
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1993年 / 125卷 / 04期
关键词：
PULSED ELECTRON BEAM ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; ION IMPLANTATION; GAAS;
D O I：
10.1080/10420159308220214
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
(001) GaAs single crystals were implanted with 150 keV Cr+ ions using a dose of 5 x 10(15) ions cm-2 The amorphized surface layers were subjected to pulsed electron beam annealing at energy densities in the range 0-1.3 J cm-2. A detailed TEM investigation of the damaged and annealed surface layer was conducted. These observations were correlated with backscattering results.
引用
收藏
页码：373 / 380
页数：8
相关论文
共 50 条
  • [21] DISTRIBUTION OF AN ION-IMPLANTED IMPURITY IN SILICON AFTER REPEATED PULSED ELECTRON ANNEALING
    DVURECHENSKII, AV
    IGONINA, NM
    GROTZSCHEL, R
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (02): : 218 - 219
  • [22] HIGH-SPEED SCANNING ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON LAYERS
    SCHILLER, S
    PANZER, S
    KLABES, R
    THIN SOLID FILMS, 1980, 73 (01) : 221 - 226
  • [23] IMPURITY PROFILES AT MULTI-PULSE ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON
    DVURECHENSKII, AV
    GROTZSCHEL, R
    IGONINA, NM
    KASHNIKOV, BP
    KOMOLOVA, NI
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 72 (01): : 301 - 304
  • [24] A SELF-FOCUSED MULTICHANNEL ELECTRON-BEAM SOURCE FOR ANNEALING OF ION-IMPLANTED SEMICONDUCTORS
    LUE, JT
    SHYU, SY
    LYU, LH
    VACUUM, 1986, 36 (05) : 275 - 278
  • [25] KINETICS OF SCANNED ELECTRON-BEAM ANNEALING OF HIGH-ENERGY AS ION-IMPLANTED SILICON
    KRIMMEL, EF
    OPPOLZER, H
    RUNGE, H
    WONDRAK, W
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (02): : 565 - 571
  • [26] THERMOELASTIC STRESS-ANALYSIS OF PULSED ELECTRON-BEAM RECRYSTALLIZATION OF ION-IMPLANTED SILICON
    SCHOEN, NC
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4747 - 4751
  • [27] REGROWTH AND DEFECT REDUCTION IN UNCAPPED SE+ IMPLANTED (100) GAAS AFTER PULSED ELECTRON-BEAM ANNEALING
    BARBIER, D
    LAUGIER, A
    DERUDET, B
    PIVOT, J
    JOURNAL OF CRYSTAL GROWTH, 1987, 82 (04) : 725 - 732
  • [28] PULSED ELECTRON-BEAMS FOR ANNEALING OF ION-IMPLANTED SILICON
    LITTLE, RG
    GREENWALD, AG
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (08): : 1031 - 1032
  • [29] PULSED ELECTRON-BEAMS FOR ANNEALING OF ION-IMPLANTED SILICON
    LITTLE, RG
    GREENWALD, AC
    MINNUCCI, JA
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (01) : 1683 - 1685
  • [30] RAPID ANNEALING OF ION-IMPLANTED GAAS
    WESCH, W
    GOTZ, G
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 94 (02): : 745 - 766
12345