JAPAN AND THE 64K QUESTION

被引：0
|
作者：
MORGAN, C
机构：
来源：
BYTE | 1982年 / 7卷 / 05期
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
引用
收藏
页码：6 / 10
页数：5
相关论文
共 50 条
  • [41] NEW 64K MEMORY CHIP GETS THE PICTURE
    DIMMLER, KJ
    CALABRIA, C
    MOUND, MG
    RECORD-AT&T BELL LABORATORIES, 1985, 63 (01): : 10 - 15
  • [42] Radiation hardened 64K/256K EEPROM technology
    Williams, D
    Adams, D
    Bishop, R
    Knoll, M
    Murray, J
    McClintock, R
    SIXTH BIENNIAL IEEE INTERNATIONAL NONVOLATILE MEMORY TECHNOLOGY CONFERENCE, 1996, : 67 - 70
  • [43] LASER PROGRAMMABLE REDUNDANCY AND YIELD IMPROVEMENT IN A 64K DRAM
    SMITH, RT
    CHLIPALA, JD
    BINDELS, JFM
    NELSON, RG
    FISCHER, FH
    MANTZ, TF
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1981, 16 (05) : 506 - 514
  • [44] MODELING REDUNDANCY IN 64K TO 16MB DRAMS
    STAPPER, CH
    ISSCC DIGEST OF TECHNICAL PAPERS, 1983, 26 : 86 - 87
  • [45] 容错64K动态随机存储器
    Ronald.P Cenker
    房振华
    微电子学, 1983, (03) : 67 - 69
  • [46] PREDICTIVE VALUE OF 64K ANTIBODIES FOR IDDM IN A CHILDHOOD POPULATION
    CHRISTGAU, S
    SIGURDSSON, E
    BRUINING, GJ
    MOLENAAR, JL
    BEKKESKOV, S
    SCANDINAVIAN JOURNAL OF IMMUNOLOGY, 1989, 30 (05) : 633 - 633
  • [47] 2 35NS 64K CMOS EEPROMS
    JOLLY, R
    TESCH, R
    CAMPBELL, K
    TENNANT, D
    OLUND, J
    CREMEN, B
    LEFFERTS, R
    ANDREWS, P
    ISSCC DIGEST OF TECHNICAL PAPERS, 1985, 28 : 172 - 173
  • [48] Retention and endurance effects of 4K and 64K FRAM memories
    Hadnagy, T.D.
    Sheldon, D.J.
    Integrated Ferroelectrics, 1994, 4 (3 pt 2) : 217 - 226
  • [49] 5伏单电源64K动态RAM
    KiyooItoh
    RyoichiHori
    HirooMasuda
    YoshiakiKamigaki
    HiroshiKauramoto
    HisaoKatto
    电子器件, 1980, (S1) : 274 - 277
  • [50] 64K DYNAMIC RAMS SET TRENDS FOR FUTURE DEVICES
    SEASE, J
    ELECTRONIC PRODUCTS MAGAZINE, 1983, 26 (03): : 111 - 115
12345