CARRIER INJECTION IN SEMICONDUCTORS WITH POSITION-DEPENDENT BAND-STRUCTURE - ELECTRON-BEAM-INDUCED CURRENT AT HETEROJUNCTIONS

被引：10

|

作者：

MUNNIX, S

BIMBERG, D

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.341633

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2505 / 2514

页数：10

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[24] ELECTRONIC TRANSPORT ANALYSIS BY ELECTRON-BEAM-INDUCED CURRENT AT VARIABLE ENERGY OF THIN-FILM AMORPHOUS-SEMICONDUCTORS
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[25] DETERMINATION OF THE BAND-EDGE OFFSET IN HETEROJUNCTIONS BY ELECTRON-BEAM INDUCED CURRENT (GAAS/GAALAS)
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PREIER, H
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[26] MEASUREMENTS OF MINORITY-CARRIER DIFFUSION LENGTH IN N-CULNS2 BY ELECTRON-BEAM-INDUCED CURRENT METHOD
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[27] MEASUREMENT OF CARRIER LIFETIME, EFFECTIVE RECOMBINATION VELOCITY, AND DIFFUSION LENGTH NEAR THE GRAIN-BOUNDARY USING THE TIME-DEPENDENT ELECTRON-BEAM-INDUCED CURRENT
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[28] MEASUREMENTS OF MINORITY-CARRIER DIFFUSION LENGTH IN N-CUINSE2 BY ELECTRON-BEAM-INDUCED CURRENT METHOD - COMMENTS
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[29] ELECTRON-BEAM-INDUCED CURRENT IN A CHEMICAL-VAPOR-DEPOSITED SIO2 PASSIVATION LAYER ON AN MOS STRUCTURE WITH A NONPENETRATING ELECTRON-BEAM
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[30] ELECTRON-BEAM-INDUCED CURRENT DETERMINATION OF MINORITY-CARRIER DIFFUSION LENGTH AND SURFACE RECOMBINATION VELOCITY IN MERCURY-CADMIUM-TELLURIDE
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