OBSERVATION OF MULTIQUANTUM WELL STRUCTURE IN AIR USING A SCANNING TUNNELING MICROSCOPE

被引：27
|
作者：
TANAKA, I
KATO, T
OHKOUCHI, S
OSAKA, F
机构：
[1] Optoelectronics Technology Research Laboratory, Tsukuba, Ibaraki300-26
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 01期
关键词：
D O I：
10.1116/1.576389
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We investigated GaInAs/InP and AlAs/GaAs multiquantum well (MQW) structures in air using a scanning tunneling microscope (STM). We obtained clear corrugated images of MQWs with nanometer resolution. These corrugations come not from a topological difference but from the difference between the tunneling conductance of the well layers to the tip and that of the barrier layers to the tip. Also the STM images are affected by various factors such as contamination and humidity in the air. We observed degradation of the STM images which might be due to the surface oxidation accelerated by the tunneling current. The degradation rate of the AlAs/GaAs MQWs was much larger than that of the GaInAs/InP MQWs. This phenomenon is interesting from the viewpoint of nanometer scale processing. © 1990, American Vacuum Society. All rights reserved.
引用
收藏
页码：567 / 570
页数：4
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