INTENSE BLUE EMISSION FROM POROUS BETA-SIC FORMED ON C+-IMPLANTED SILICON

被引：153

作者：

LIAO, LS ^{[1
]}

BAO, XM ^{[1
]}

YANG, ZF ^{[1
]}

MIN, NB ^{[1
]}

机构：

[1] NANJING UNIV,NATL SOLID STATE MICROSTUCT LAB,NANJING 210093,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 18期

关键词：

D O I：

10.1063/1.113990

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon ions were implanted into crystal silicon wafers at an energy of 50 keV and with a dose of 1017 cm-2 followed by thermal annealing. A layer of polycrystalline β-SiC was formed beneath the sample surface. Porous nanometer structures were prepared by conventional anodization. At room temperature, the samples exhibit a blue luminescence peak at 2.79 eV (445 nm), which is higher than the energy gap of bulk β-SiC (2.2 eV), and its intensity is stronger than that of the reference porous silicon. The results could be explained by the quantum confinement effect.© 1995 American Institute of Physics.

引用

页码：2382 / 2384

页数：3

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