DETERMINATION OF BAND OFFSETS IN GAASP/GAP STRAINED-LAYER QUANTUM-WELL STRUCTURES USING PHOTOREFLECTANCE AND PHOTOLUMINESCENCE SPECTROSCOPY

被引：0
|
作者：
HARA, Y
YAGUCHI, H
ONABE, K
SHIRAKI, Y
ITO, R
机构：
[1] UNIV TOKYO,DEPT APPL PHYS,BUNKYO KU,TOKYO 113,JAPAN
[2] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU,TOKYO 153,JAPAN
来源：
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993 | 1994年 / 136卷 / 136期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaAs1-xPx(x=0.81,0.84,0.86) /GaP strained-layer quantum well (SLQW) structures have been studied using photoreflectance(PR) as well as photoluminescence(PL) spectroscopy. The PR measurements have revealed the optical transitions between the quantized subbands in the higher-lying quantum well at the Gamma point. From the PR measurements, combined with a square-potential effective-mass calculation, the conduction band offset ratio has been determined to be 0.68+/-0.1 for x=0.84. This result leads to the type-I quantum well at the X-point conduction band minima. The low-temperature PL spectra are very consistent with the type-I band scheme.
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页码：361 / 366
页数：6
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