GROWTH OF ANODIC FILMS ON VALVE METALS

被引:13
|
作者
HURLEN, T
GULBRANDSEN, E
机构
[1] Department of Chemistry, University of Oslo, N-0315 Oslo
关键词
ANODIC FILMS; FILM GROWTH; ION TRANSPORT; ION TRANSFER; METAL PASSIVITY; VALVE METALS; ALUMINUM; MARKER STUDIES;
D O I
10.1016/S0013-4686(94)85069-0
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
By analysis of transport number and F-log j data for valve metals under galvanostatic anodization, obedience is found to the kink dependent Cabrera-Mott equation for irreversible transfer of metal ions from metal to oxide and to the defect dependent high-field ion migration equation for transport of both metal and oxygen ions in the growing anodic film. For Al, the kink and defect dependences are d log s/d log j = 0.5 and d log N/d log j approaching 0.67 at low current densities (oxygen ion transport) and 0.5 at high ones (metal ion transport), and the ion transfer valence is n = 3. The denser is the oxygen packing in the oxide, the higher is the electric field needed to drive a given ionic current through it.
引用
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页码:2169 / 2172
页数:4
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