CHARACTERIZATION OF OXYGEN PRECIPITATES IN CZOCHRALSKI SILICON BY IMAGING SIMS

被引：4
|
作者：
GARA, S
HUTTER, H
STINGEDER, G
TIAN, CS
FUHRER, H
GRASSERBAUER, M
机构：
[1] VIENNA TECH UNIV,INST ANALYT CHEM,GETREIDEMARKT 9-151,A-1060 VIENNA,AUSTRIA
[2] WACKER CHEMITRON,W-8263 BURGHAUSEN,GERMANY
[3] BEIJING POLYTECH UNIV,DEPT ELECT ENGN,RELIABIL PHYS LAB,BEIJING 100022,PEOPLES R CHINA
来源：
MIKROCHIMICA ACTA | 1992年 / 107卷 / 3-6期
关键词：
IMAGING SIMS; OXYGEN PRECIPITATES; CZOCHRALSKI SILICON; SPUTTER INDUCED ROUGHENING;
D O I：
10.1007/BF01244468
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
This paper presents a three-dimensional characterization of oxygen defects in Czochralski-silicon (CZ) by 3D-SIMS using a camera based imaging system. Different manufacturing processes yielding a variation in size and distribution of oxygen precipitates are monitored by imaging SIMS and conventional depth profiling. Emphasis is laid on the characterization of the precipitation behavior governed by different annealing processes. The limitations of 3D SIMS for oxygen defect imaging are studied. Sputter induced microroughening of the crater bottom, investigated by SEM, is shown to be strongly correlated with defect densities caused by oxygen precipitates.
引用
收藏
页码：149 / 160
页数：12
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