OPTICAL-ABSORPTION IN PLASMA-DEPOSITED SILICON OXYNITRIDE FILMS

被引：30

作者：

ANCE, C ^{[1
]}

DECHELLE, F ^{[1
]}

FERRATON, JP ^{[1
]}

LEVEQUE, G ^{[1
]}

ORDEJON, P ^{[1
]}

YNDURAIN, F ^{[1
]}

机构：

[1] UNIV AUTONOMA MADRID,DEPT FIS MAT CONDENSADA,E-28049 MADRID,SPAIN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 11期

关键词：

D O I：

10.1063/1.107303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an experimental and theoretical study of the optical absorption of amorphous silicon oxynitride films. The optical absorption coefficient-alpha in the energy range from 4 to 10 eV has been measured for SiOxNyHz films between the nitride and oxide compositions grown by plasma-enhanced chemical vapor deposition. We have also calculated the coefficient-alpha for SiOxNy alloys assuming a random mixture of Si-N and Si-O bonds within the disordered alloy. The variation of the optical gap E(g) with the composition and the appearance of steps in the optical absorption for oxygen-rich samples are discussed.

引用

页码：1399 / 1401

页数：3

共 50 条

[41] TEMPERATURE-DEPENDENCE OF THE BIAXIAL MODULUS, INTRINSIC STRESS AND COMPOSITION OF PLASMA-DEPOSITED SILICON OXYNITRIDE FIRMS
HARDING, DR
OGBUJI, LUT
FREEMAN, MJ
JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) : 1673 - 1680
[42] ELECTRICAL AND OPTICAL-PROPERTIES OF PLASMA-DEPOSITED AMORPHOUS HYDROCARBON FILMS
ROHWER, K
HAMMER, P
THIELE, JU
GISSLER, W
BLAUDECK, P
FRAUENHEIM, T
MEISSNER, D
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 : 843 - 846
[43] INSITU REAL-TIME ELLIPSOMETRIC STUDY OF THE GROWTH OF RF PLASMA-DEPOSITED AMORPHOUS HYDROGENATED SILICON OXYNITRIDE THIN-FILMS
CAMPMANY, J
CANILLAS, A
ANDUJAR, JL
COSTA, J
BERTRAN, E
THIN SOLID FILMS, 1993, 228 (1-2) : 137 - 140
[44] HYDROGEN AND DEUTERIUM MIGRATION IN ANNEALED PLASMA-DEPOSITED SILICON-NITRIDE FILMS
SAVALL, C
BRUYERE, JC
THIN SOLID FILMS, 1995, 258 (1-2) : 1 - 4
[45] Nanoindentation of plasma-deposited nitrogen-rich silicon nitride thin films
Soh, Martin T. K.
Fischer-Cripps, A. C.
Savvides, N.
Musca, C. A.
Faraone, L.
JOURNAL OF APPLIED PHYSICS, 2006, 100 (02)
[46] THE EFFECTS OF BOND STRAIN ON THE PROPERTIES OF PLASMA-DEPOSITED SILICON-OXIDE FILMS
MACHONKIN, MA
JANSEN, F
THIN SOLID FILMS, 1987, 150 (2-3) : L97 - L99
[47] Low-Temperature Hydrolysis (Oxidation) of Plasma-Deposited Silicon Nitride Films
Chiang, J. N.
Ghanayem, S. G.
Hess, D. W.
CHEMISTRY OF MATERIALS, 1989, 1 (02) : 194 - 198
[48] Low-temperature plasma-deposited silicon epitaxial films: Growth and properties
Demaurex, Benedicte
Bartlome, Richard
Seif, Johannes P.
Geissbuehler, Jonas
Alexander, Duncan T. L.
Jeangros, Quentin
Ballif, Christophe
De Wolf, Stefaan
JOURNAL OF APPLIED PHYSICS, 2014, 116 (05)
[49] LUMINESCENCE STUDIES OF PLASMA-DEPOSITED HYDROGENATED SILICON
STREET, RA
KNIGHTS, JC
BIEGELSEN, DK
PHYSICAL REVIEW B, 1978, 18 (04): : 1880 - 1891
[50] PROPERTIES OF PLASMA-DEPOSITED SILICON-OXIDE
VANDENBERG, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C118 - C118

← 1 2 3 4 5 →