AUTONOMOUS LIQUID ENCAPSULATED CZOCHRALSKI (LEC) GROWTH OF SINGLE-CRYSTAL GAAS

被引：0
|
作者：
SCHWUTTKE, GH [1 ]
RIEDLING, K [1 ]
PANDELISEV, K [1 ]
JAVIDI, M [1 ]
WHITE, RC [1 ]
机构：
[1] ARIZONA STATE UNIV,SEMICOND MAT LAB,TEMPE,AZ 85287
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C231 / C232
页数：2
相关论文
共 50 条
  • [31] Local and global simulations of Bridgman and liquid-encapsulated Czochralski crystal growth
    Department of Mechanical Engineering, State Univ. New York at Stony Brook, Stony Brook, NY 11794-2300, United States
    不详
    不详
    J. Heat Transf., 4 (865-873):
  • [32] Local and global simulations of Bridgman and liquid-encapsulated Czochralski crystal growth
    Zhang, H.
    Zheng, L.L.
    Prasad, V.
    Larson, D.J. Jr.
    Journal of Heat Transfer, Transactions ASME, 1998, 120 (04): : 865 - 873
  • [33] Local and global simulations of Bridgman and liquid-encapsulated Czochralski crystal growth
    Zhang, H
    Zheng, LL
    Prasad, V
    Larson, DJ
    JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, 1998, 120 (04): : 865 - 873
  • [34] THE CZOCHRALSKI GROWTH OF SINGLE-CRYSTAL LITHIUM ALUMINATE, LIALO2
    COCKAYNE, B
    LENT, B
    JOURNAL OF CRYSTAL GROWTH, 1981, 54 (03) : 546 - 550
  • [35] GROWTH OF GAAS PLATE CRYSTAL BY THE LIQUID ENCAPSULATED STEPANOV METHOD
    FUJII, T
    EGUCHI, M
    FUKUDA, T
    JOURNAL OF CRYSTAL GROWTH, 1988, 87 (04) : 573 - 577
  • [36] Flow transitions in melts during Czochralski growth of GaAs single crystal
    Chen Shu-Xian
    Li Ming-Wei
    JOURNAL OF INORGANIC MATERIALS, 2007, 22 (01) : 15 - 20
  • [37] SYNTHESIS AND SINGLE-CRYSTAL GROWTH OF GALLIUM-PHOSPHIDE BY THE LIQUID ENCAPSULATED VERTICAL BRIDGMAN TECHNIQUE
    RAJAN, KG
    SHEKAR, NVC
    RAO, GVN
    SINGH, AJ
    IYER, RM
    BULLETIN OF MATERIALS SCIENCE, 1988, 11 (04) : 269 - 275
  • [38] LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF SILVER THIOGALLATE
    KORCZAK, P
    STAFF, CB
    JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) : 386 - 389
  • [39] THE GROWTH AND PERFECTION OF SINGLE-CRYSTAL INDIUM-PHOSPHIDE PRODUCED BY THE LEC TECHNIQUE
    COCKAYNE, B
    BROWN, GT
    MACEWAN, WR
    JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) : 9 - 15
  • [40] GROWTH OF SEMI-INSULATING GaAs SINGLE CRYSTAL BY LEC METHOD.
    Osaka, Jiro
    Kobayashi, Takashi
    Nakanishi, Hideo
    Reports of the Electrical Communication Laboratory, 1985, 33 (01): : 146 - 155
12345