Chemical bath deposition and characterization of Cu2O-CuxS thin films

被引:0
|
作者
Eya, D. D. O. [1 ]
机构
[1] Fed Univ Technol Owerri, Dept Phys, Owerri, Nigeria
来源
TURKISH JOURNAL OF PHYSICS | 2010年 / 34卷 / 01期
关键词
Chemical bath; optical properties; transmittance; energy band gap; solar control; Copper (I) Sulphide; annealing;
D O I
10.3906/fiz-0905-18
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Cu-2 O-Cu-x S thin films have been deposited on glass substrate by chemical bath deposition technique. The films were obtained by depositing Copper Sulphide (Cu-x S) on Copper (I) Oxide (Cu-2 O) and then Cu-2 O on Cu-x S. The peak solar transmittance across the thin films were found to be < 40% and as low as 10%, and falls with energy into the infra-red region. The absorbance is higher near the UV and IR regions. Reflectance is < 20%. The band gap of both respective combinations is in the range of 2.19-2.32 eV and with film thickness 0.54 mu m-1.30 mu m. The extinction coefficient and refractive index are in the ranges of 5.41 x 10(-2) - 20.11 x 10(-2) and 1.60-2.60, respectively. Since the absorbance increases as one goes towards the IR region, the films could be useful in solar control (providing cool interior) in tropical regions.
引用
收藏
页码:51 / 57
页数:7
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