AHARONOV-BOHM EFFECT IN SEMICONDUCTOR QUANTUM-WELLS

被引：5
|
作者：
ELCI, A
DEPATIE, D
机构：
[1] Phillips Lab., Kirtland Air Force Base, Albuquerque, NM
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 02期
关键词：
D O I：
10.1088/0268-1242/9/2/006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a stationary state description of the Aharonov-Bohm effect in semiconductor quantum wells in terms of Landau wavefunctions and discuss electron injection into wells. This description explicitly shows that, if the potential drops between the quantum well interfaces are negligible, a net ballistic charge current in the direction perpendicular to the magnetic field and perpendicular to the axis of the wells is produced only by electrons which are injected into the structure in Aharonov-Bohm superposition states.
引用
收藏
页码：163 / 173
页数：11
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