MATERIAL AND DEVICE PROPERTIES OF MOCVD GROWN INALAS/INGAAS HEMTS

被引：3
|
作者：
PAVLIDIS, D
HONG, K
HEIN, K
KWON, Y
机构：
[1] Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122
来源：
SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 09期
关键词：
HEMT; INGAAS; INALAS; MOCVD; MBE;
D O I：
10.1016/0038-1101(95)00045-U
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A systematic study of MOCVD grown InP based heterostructures and their application in HEMT technology is reported. The heterostructures are realized by Metal-Organic-Chemical-Vapor-Deposition (MOCVD) which is a well suited for production growth technique. The impact of growth temperature and AsH, flow rates on the material properties was investigated and optimized. To improve the device performance even further, Fe-doped InAlAs is also studied. By optimizing the growth conditions of InAlAs/InGaAs heterostructure, we demonstrates high performance I pm gate length InAlAs/InGaAs HEMTs which show f(t) of 60 GHz and f(max) of 120 GHz. By applying the same submicron technology on MOCVD HEMT layers grown by a commercial vendor as on Molecular-Beam- Epitaxy grown layers, we could demonstrate equivalent f(t) (180 GHz) and f(max) (220 GHz) performance.
引用
收藏
页码：1697 / 1701
页数：5
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