VACANCY-TYPE DEFECTS IN NEUTRON-IRRADIATED SILICON

被引：0
|
作者：
MENG, XT
机构：
[1] Institute of Nuclear Energy Technology, Tsinghua University, Beijing
来源：
CHINESE PHYSICS LETTERS | 1993年 / 10卷 / 10期
关键词：
D O I：
10.1088/0256-307X/10/10/009
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Positron annihilation measurements show that the radiation defects and secondary defects in neutron-transmutation-doped (NTD) Si irradiated by two neutron doses can be removed at 600-650-degrees-C. The concentration and annealing behavior of V-type and V2 defects are related to the neutron doses. V4 appears at 150-degrees-C and 450-degrees-C-550-degrees-C in NTD Si irradiated by higher neutron dose.
引用
收藏
页码：605 / 608
页数：4
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