ANNEALING OF DEFECTS IN QUENCHED N-TYPE SILICON IRRADIATED WITH FAST ELECTRONS

被引：0

作者：

BEREZINA, GM

KORSHUNOV, FP

RAINES, LY

机构：

来源：

INORGANIC MATERIALS | 1979年 / 15卷 / 07期

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D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：895 / 897

页数：3

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[1] EFFECT OF LITHIUM ON RECOMBINATION IN N-TYPE SILICON IRRADIATED BY FAST ELECTRONS
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[4] INFLUENCE OF TRAPPING EFFECTS ON PHOTOCONDUCTIVITY SPECTRA OF N-TYPE SILICON IRRADIATED WITH FAST ELECTRONS
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[7] ELECTRICALLY ACTIVE INTERSTITIAL DEFECTS IN IRRADIATED N-TYPE SILICON
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[8] NATURE OF RADIATION DEFECTS IN N-TYPE SILICON IRRADIATED WITH ELECTRONS OF ENERGY CLOSE TO THE DEFECT FORMATION THRESHOLD
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[10] HALL-MOBILITY IN N-TYPE GERMANIUM IRRADIATED WITH FAST ELECTRONS
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