INVESTIGATION OF THE PROCESS LATITUDE FOR SUB-HALF-MICRON PATTERN REPLICATION IN X-RAY-LITHOGRAPHY

被引：8
|
作者：
OERTEL, HK
WEISS, M
HUBER, HL
机构：
[1] Fraunhofer Institut für Mikrostrukturtechnik (IMT), D-1000 Berlin 33
来源：
MICROELECTRONIC ENGINEERING | 1991年 / 13卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(91)90107-O
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this contribution the influence of the resist development on the process latitude of X-ray lithography is investigated and it is found that the consideration of resist contrast and dark erosion rate tends to increase the process window considerably For long (2-dimensional) features this method gains a comfortable process window for features dimensions down to 150 nm.
引用
收藏
页码：339 / 342
页数：4
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