INTERFACE GROWTH CONDITIONS AND JUNCTION FORMATION FOR GAXAL1-XAS-GAAS HIGH-EFFICIENCY LEDS

被引：0
|
作者：
MATARE, HF [1 ]
机构：
[1] INT SOLID STATE ELECTR CONSULTANTS,SANTA MONICA,CA 90400
来源：
SOLID STATE TECHNOLOGY | 1972年 / 15卷 / 12期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：41 / 45
页数：5
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