DISLOCATION VELOCITY IN INDIUM-PHOSPHIDE

被引：25
|
作者：
YONENAGA, I
SUMINO, K
机构：
[1] Institute for Materials Research, Tohoku University
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 01期
关键词：
D O I：
10.1063/1.104439
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Velocities of alpha, beta, and screw dislocations in InP crystals generated from surface scratches were measured as a function of stress and temperature by means of the etch pit technique. Effects of Zn and S impurities, acting as acceptor and donor, respectively, on the dislocation velocity were also investigated. It was found that Zn impurity strongly retards the motion of all types of dislocations. On the other hand, S impurity is found to reduce the mobilities of beta and screw dislocations while it enhances the mobility of alpha-dislocation.
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页码：48 / 50
页数：3
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