COMPENSATION BY DEEP LEVELS IN SEMI-INSULATING GAAS

被引：8
|
作者：
LOMBOS, BA
YEMENIDJIAN, N
AVEROUS, M
机构：
来源：
CANADIAN JOURNAL OF PHYSICS | 1982年 / 60卷 / 01期
关键词：
D O I：
10.1139/p82-005
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：35 / 40
页数：6
相关论文
共 50 条
  • [41] Intrinsic deep levels in semi-insulating silicon carbide
    Mitchel, WC
    Mitchell, WD
    Landis, G
    QUANTUM SENSING AND NANOPHOTONIC DEVICES, 2004, 5359 : 284 - 289
  • [42] Irradiation effects on the compensation of semi-insulating GaAs for particle detector applications
    Cavallini, A
    Polenta, L
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (02)
  • [43] IMPACT IONIZATION OF DEEP TRAPS IN SEMI-INSULATING GAAS SUBSTRATES
    LI, ZM
    MCALISTER, SP
    MCMULLAN, WG
    HURD, CM
    DAY, DJ
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (12) : 7368 - 7372
  • [44] COMPENSATION MECHANISM IN SEMI-INSULATING GAAS - THE ROLE OF INTRINSIC ACCEPTOR DEFECTS
    VONBARDELEBEN, HJ
    BOURGOIN, JC
    STIEVENARD, D
    APPLIED PHYSICS LETTERS, 1988, 53 (12) : 1089 - 1091
  • [45] Field-enhanced trapping in deep levels by multiple phonon emission in semi-insulating GaAs
    Rubinger, RM
    de Oliveira, AG
    Ribeiro, GM
    Bezerra, JC
    Moreira, MVB
    Chacham, H
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (11) : 6541 - 6544
  • [46] CURRENT-VOLTAGE CHARACTERISTICS AND DEEP LEVELS IN CHROMIUM-DOPED SEMI-INSULATING GAAS
    KITAHARA, K
    NAKAI, K
    SHIBATOMI, A
    OHKAWA, S
    APPLIED PHYSICS LETTERS, 1978, 32 (04) : 259 - 260
  • [47] Deep　Levels　in　Undoped　Semi-insulating　Liquid　Encapsulated　Czochralski　GaAs　Detected　by　Photocurrent　Measurement
    杨瑞霞
    胡凯生
    李光平
    周智慧
    郭小兵
    RARE METALS, 1997, (01) : 73 - 76
  • [48] CHARACTERIZATION OF DEEP LEVELS IN SEMI-INSULATING GAAS CRYSTALS BY A SPECTROSCOPIC PHOTO-ELECTROCHEMICAL CURRENT
    OTSUBO, M
    MUROTANI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (06): : L345 - L347
  • [49] Investigation of deep levels in semi-insulating GaAs by means of a thermally activated piezoelectric photoacoustic measurements
    Ikari, T
    Fukuyama, A
    Akashi, Y
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2001, 4 (1-3) : 253 - 255
  • [50] DEEP LEVELS IN SI-IMPLANTED AND THERMALLY ANNEALED SEMI-INSULATING GAAS-CR
    RHEE, JK
    BHATTACHARYA, PK
    KOYAMA, RY
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3311 - 3313
12345