HIGH-VOLTAGE ELECTRON-MICROSCOPY OF INTERFACIAL DEFECTS IN GAAS

被引：2

|

作者：

OSIECKI, R

THOMAS, G

机构：

来源：

MATERIALS SCIENCE AND ENGINEERING | 1972年 / 10卷 / 01期

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D O I：

10.1016/0025-5416(72)90065-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：53 / &

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