SOS STRAIN-GAUGE SENSORS FOR FORCE AND PRESSURE TRANSDUCERS

被引：16
|
作者：
STUCHEBNIKOV, VM
机构：
[1] Integrated Sensors Institute, Uljanovsk Centre of Microelectronics
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 1991年 / 28卷 / 03期
关键词：
D O I：
10.1016/0924-4247(91)85009-D
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A set of semiconductor force and pressure sensors developed on the basis of heteroepitaxial layers of silicon on sapphire (SOS) is briefly described. Physico-technological optimization of the SOS sensing elements makes it possible to create transducers for pressure measurement of cryogenic (down to 1 K), normal- and high-temperature (up to 350-degrees-C) media without compensating elements and with a very small error due to temperature sensitivity, as well as radiation-resistant transducers.
引用
收藏
页码：207 / 213
页数：7
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