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- [32] 1ST FABRICATION OF STRAINED LAYER MODULATION DOPED INGAAS/INGAASP MULTIPLE QUANTUM-WELL DFB LASER-DIODES EMITTING AT 1.5-MU-M AND HAVING HIGH QUANTUM EFFICIENCY AND NARROW LINEWIDTH INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 905 - 905