The investigation of luminescence properties of nitride-based heterostructures, containing superlattice

被引：0
|
作者：
Menkovich, E. A. [1 ]
Solomonov, A., V [1 ]
Tarasov, S. A. [1 ]
Yurgin, P. A. [1 ]
机构：
[1] St Petersburg Electrotech Univ, LETI, 5 Prof Popov Str, St Petersburg 197376, Russia
来源：
FUNCTIONAL MATERIALS | 2014年 / 21卷 / 02期
关键词：
D O I：
10.15407/fm21.02.142
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of superlattice adding on the luminescence properties of heterostructures based on (Al,In,Ga)N was investigated. It is shown that using structures with two superlattices: the InGaN/InGaN under active region and the AlGaN/GaN as a top p-layer gives the best effect. The elastic stresses on heterointerface of these structure are compensated optimally. As a result they are the most effective and stable functionality.
引用
收藏
页码：142 / 145
页数：4
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