共 50 条
- [21] MECHANISM OF COMPENSATION OF IRON-DOPED SEMI-INSULATING GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (08): : 1099 - 1099
- [22] CAPTURE OF HOLES BY CHROMIUM IMPURITY CENTERS IN SEMI-INSULATING GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (07): : 788 - 790
- [26] DISTRIBUTION MEASUREMENT OF THE ELECTRICAL-PROPERTIES OF SEMI-INSULATING GALLIUM-ARSENIDE MONOCRYSTALS REVUE TECHNIQUE THOMSON-CSF, 1984, 16 (02): : 261 - 279
- [28] IMPURITY CATHODOLUMINESCENCE OF SEMI-INSULATING GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (11): : 1790 - +