CHARACTERIZATION OF THE SILICON-ON-INSULATOR MATERIAL FORMED BY HIGH-DOSE OXYGEN IMPLANTATION USING SPECTROSCOPIC ELLIPSOMETRY

被引：20
|
作者：
FERRIEU, F [1 ]
VU, DP [1 ]
DANTERROCHES, C [1 ]
OBERLIN, JC [1 ]
MAILLET, S [1 ]
GROB, JJ [1 ]
机构：
[1] CTR RECH NUCL,PHASE GRP,F-67037 STRASBOURG,FRANCE
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 08期
关键词：
D O I：
10.1063/1.339317
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3458 / 3461
页数：4
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