共 33 条
- [21] PHOTON TRANSPORT OF NON-EQUILIBRIUM CARRIERS IN A VARIABLE-GAP SEMICONDUCTOR BY BAND IMPURITY LEVEL RADIATIVE RECOMBINATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (03): : 284 - 290
- [22] PHOTOSENSITIVITY OF LONG DIODE STRUCTURES MADE OF VARIABLE-GAP ALXGA1-XAS SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (01): : 93 - 94
- [23] PHOTON TRANSPORT OF MOBILE NON-EQUILIBRIUM CARRIERS IN VARIABLE-GAP SEMICONDUCTORS AS A RESULT OF BAND IMPURITY LEVEL RADIATIVE RECOMBINATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (10): : 1218 - 1219
- [24] TEMPERATURE-DEPENDENCE OF MOBILITY IN PB0.82SN0.18TE SOLID-SOLUTION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02): : 236 - 237
- [25] Dependence of the superconducting transition parameters on the solid-solution composition and Te excess in Sn1−zPbzTe:In Physics of the Solid State, 1999, 41 : 1956 - 1958
- [26] DEPENDENCE OF LATTICE-PARAMETERS OF PB1-XSNXS1-YSEY SOLID-SOLUTION ON THEIR COMPOSITION PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 16 (23): : 21 - 23
- [28] CHARACTERISTICS OF THE BEHAVIOR OF COPPER IMPURITIES AND RECOMBINATION OF NON-EQUILIBRIUM CARRIERS IN VARIABLE-GAP ALXGA1-XAS-CU SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (02): : 193 - 196
- [29] RELAXATION OF ELASTIC STRAINS AND THE DIMENSIONAL DEPENDENCE OF PHASE CHEMICAL-COMPOSITION IN CRYSTALS AS THE PRODUCTS OF SOLID-SOLUTION DECOMPOSITIONS DOKLADY AKADEMII NAUK SSSR, 1987, 296 (02): : 351 - 354
- [30] CALCULATION OF THE CURRENT-VOLTAGE CHARACTERISTICS OF AN S-TYPE DIODE MADE OF A COMPENSATED SOLID-SOLUTION WITH A VARIABLE COMPOSITION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (05): : 502 - 506