GREEN INJECTION LUMINESCENCE FROM FORWARD-BIASED AU-GAP SCHOTTKY BARRIERS

被引:25
|
作者
CARD, HC
SMITH, BL
机构
关键词
D O I
10.1063/1.1660028
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:5863 / &
相关论文
共 50 条
  • [41] Fermi-level depinning and hole injection induced two-dimensional electron related radiative emissions from a forward biased Ni/Au-AlGaN/GaN Schottky diode
    Li, B. K.
    Wang, M. J.
    Chen, K. J.
    Wang, J. N.
    APPLIED PHYSICS LETTERS, 2009, 95 (23)
  • [42] INFLUENCE OF AN ELECTRIC-FIELD ON THE PHOTOCURRENT DUE TO ELECTRON-EMISSION FROM THE METAL INTO THE SEMICONDUCTOR IN AU-GAP STRUCTURES
    GOLDBERG, YA
    KONSTANTINOV, OV
    LVOVA, TV
    OKUNEV, KK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (09): : 981 - 983
  • [43] Electroluminescence from a forward biased Ni/Au-AlGaN/GaN Schottky diode: evidence of Fermi level de-pinning at Ni/AlGaN interface
    Li, B. K.
    Wang, M. J.
    Chen, K. J.
    Wang, J. N.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8):
  • [44] RELAXATION OF GREEN LUMINESCENCE AND POST-INJECTION EMF OF GAP P-N STRUCTURES
    TSARENKOV, BV
    VEDENIN, VD
    EVSTROPOV, VV
    IMENKOV, AN
    POPOV, IV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (11): : 1825 - 1828
  • [45] Luminescence emission from forward- and reverse-biased multicrystalline silicon solar cells
    Bothe, K.
    Ramspeck, K.
    Hinken, D.
    Schinke, C.
    Schmidt, J.
    Herlufsen, S.
    Brendel, R.
    Bauer, J.
    Wagner, J. -M.
    Zakharov, N.
    Breitenstein, O.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (10)
  • [46] Analysis of electroluminescence spectra from high optical-power density forward-biased silicon-led in standard CMOS technology
    Cong, Jia
    Mao, Luhong
    Xie, Sheng
    Guo, Weilian
    Zhao, Fan
    Cai, Haocheng
    OPTIK, 2020, 207
  • [47] Efficient spin extraction from nonmagnetic semiconductors near forward-biased ferromagnetic-semiconductor modified junctions at low spin polarization of current
    Bratkovsky, AM
    Osipov, VV
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (08) : 4525 - 4529
  • [48] INJECTION-STIMULATED TRANSFORMATION OF THE GREEN LUMINESCENCE SPECTRA OF GAP-N LIGHT-EMITTING-DIODES
    TORCHINSKAYA, TV
    KARABAEV, AG
    SHEINKMAN, MK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (08): : 841 - 847
  • [49] INJECTION-ENHANCED TRANSFORMATION OF LUMINESCENCE SPECTRA OF GREEN GAP-N LIGHT-EMITTING-DIODES
    TORCHINSKAYA, TV
    JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (04) : 423 - 429
  • [50] FORMATION OF SCHOTTKY BARRIERS ON GAAS(110) - FROM ADSORBATE-INDUCED GAP STATES TO INTERFACE METALLICITY
    KAHN, A
    STILES, K
    MAO, D
    HORNG, SF
    YOUNG, K
    MCKINLEY, J
    KILDAY, DG
    MARGARITONDO, G
    JOURNAL OF ELECTRONIC MATERIALS, 1989, 18 (01) : 33 - 37