GREEN INJECTION LUMINESCENCE FROM FORWARD-BIASED AU-GAP SCHOTTKY BARRIERS

被引：25
|
作者：
CARD, HC
SMITH, BL
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 13期
关键词：
D O I：
10.1063/1.1660028
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：5863 / &
相关论文
共 50 条
  • [1] NEAR IDEAL AU-GAP SCHOTTKY DIODES
    SMITH, BL
    JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4675 - &
  • [2] EDGE LUMINESCENCE SPECTRUM OF FORWARD-BIASED GAP P-N JUNCTIONS
    BUGARINOVICH, D
    EVSTROPO.VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (03): : 358 - +
  • [3] On the carrier mobility in forward-biased semiconductor barriers
    Lundstrom, Mark
    Tanaka, Shin'ichi
    Applied Physics Letters, 1995, 66 (08):
  • [4] EXCITON EMISSION FROM FORWARD-BIASED ZINC SELENIDE SCHOTTKY DIODES
    RYALL, MD
    ALLEN, JW
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (12) : 2137 - 2141
  • [5] ELECTROLUMINESCENCE IN FORWARD-BIASED ZINC SELENIDE SCHOTTKY DIODES
    LIVINGSTONE, AW
    TURVEY, K
    ALLEN, JW
    SOLID-STATE ELECTRONICS, 1973, 16 (03) : 351 - 356
  • [6] EFFECT OF AN INTERFACIAL LAYER ON MINORITY-CARRIER INJECTION IN FORWARD-BIASED SILICON SCHOTTKY DIODES
    CARD, HC
    RHODERICK, EH
    SOLID-STATE ELECTRONICS, 1973, 16 (03) : 365 - 374
  • [7] NUMERICAL SIMULATIONS OF THE CAPACITANCE OF FORWARD-BIASED SCHOTTKY-DIODES
    HJELMGREN, H
    KOLLBERG, E
    LUNDGREN, L
    SOLID-STATE ELECTRONICS, 1991, 34 (06) : 587 - 590
  • [8] Spin accumulation in forward-biased MnAs/GaAs Schottky diodes
    Stephens, J
    Berezovsky, J
    McGuire, JP
    Sham, LJ
    Gossard, AC
    Awschalom, DD
    PHYSICAL REVIEW LETTERS, 2004, 93 (09) : 097602 - 1
  • [9] ELECTRO-LUMINESCENCE OF FORWARD-BIASED AU THIN OXIDE N-GAAS STRUCTURES
    GUTKIN, AA
    SEDOV, VE
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (03): : 348 - 349
  • [10] EMISSION OF LIGHT BY METAL IN A FORWARD-BIASED SCHOTTKY DIODE.
    Kosyachenko, L.A.
    Kukhto, E.F.
    Sklyarchuk, V.M.
    Soviet physics. Technical physics, 1984, 29 (06): : 675 - 676
12345