ELECTRONIC-STRUCTURE OF GE/SI MONOLAYER STRAINED-LAYER SUPERLATTICES

被引：97
|
作者：
PEARSALL, TP [1 ]
BEVK, J [1 ]
BEAN, JC [1 ]
BONAR, J [1 ]
MANNAERTS, JP [1 ]
OURMAZD, A [1 ]
机构：
[1] AT&T BELL LABS,HOLMDEL,NJ 07733
来源：
PHYSICAL REVIEW B | 1989年 / 39卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.39.3741
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：3741 / 3757
页数：17
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